Pure silicon at 300 K has equal electron and hole concentration of 1.5 10¹⁶ ~m ⁻³ . If the hole concentration increases to 3 10²² ~m ⁻³ , then electron concentration in the silicon is

Step-by-step solution

n _ e = n _ h =1.5 10¹⁶ ~m ⁻³ Number of intrinsic charge carriers, n _ i ^2= n _ e n _ h = (1.5 10¹⁶ )^2 Again, aligned & (1.5 10¹⁶ )^2= n _ e (3 10²² ) & n _ e =7.5 10^9 ~m ⁻³ aligned