The hole and the free electron concentrations in a pure silicon at room temperature are given by 1.4 10¹⁶ ~m ⁻³ each under equilibrium. When it is doped with indium and the hole concentration is n _ h =4 10²² ~m ⁻³ , the electron concentrat

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The hole and the free electron concentrations in a pure silicon at room temperature are given by 1.4 10¹⁶ ~m ⁻³ each under equilibrium. When it is doped with indium and the hole concentration is n _ h =4 10²² ~m ⁻³ , the electron concentration is

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Correct answer: A. 0.49 10¹⁰ ~m ⁻³

Here, n _ i =1.4 10¹⁶ ~m ⁻³ aligned & n _ h =4 10²² ~m ⁻³ & n _ i ^2= n _ h n _ e aligned Electron concentration, = (1.4 10¹⁶ )^2 4 10²² =0.49 10¹⁰ ~m ⁻³

The hole and the free electron concentrations in a pure silicon at room temperature are given by 1.4 10¹⁶ ~m ⁻³ each under equilibrium. When it is doped with indium and the hole concentration is n _ h =4 10²² ~m ⁻³ , the electron concentration is

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