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AP EAMCET2014PhysicsSemiconductors

A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6 10¹⁶ / m ^3 . If the donor concentration level is 4.8 10²⁰ / m ^3 , then the concentration of holes in the semiconductor is

Options

  1. A53 10¹² / m ^3
  2. B4 10¹¹ / m ^3
  3. C4 10¹² / m ^3
  4. D5.3 10¹¹ / m ^3

Correct answer

D. 5.3 10¹¹ / m ^3

Step-by-step solution

Given aligned & n₁=1.6 10¹⁶ / m ^3 & n_e=4.8 10²⁰ / m ^3 & n_h=? aligned The concentration of holes in the semiconductor aligned n₁^2 & =n_e n_h (1.6 10¹⁶ )^2 & =4.8 10²⁰ n_h n_h & = 2.56 10³² 4.8 10²⁰ =5.3 10¹¹ / m ^3 aligned

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