Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
AP EAMCET2014PhysicsSemiconductors

The output characteristics of an n-p-n transistor represent, ( I_C= collector current, V_ C E = potential difference between collector and emitter, I_B= base current, V_ B B = voltage given to base, V_ B E = the potential difference between base and emitter)

Options

  1. Achanges in I_C as I_B and V_ B B are changed
  2. Bchanges in I_C with changes in V_ C E (I_B= . constant )
  3. Cchanges in I_B with changes in V_ C E
  4. Dchange in I_C as V_ B E is changed

Correct answer

B. changes in I_C with changes in V_ C E (I_B= . constant )

Step-by-step solution

The potential difference between base and emitter changes in I_C with changes in V_ C E (when I_B= constant )

Practice Semiconductors on Quantrex Academy →

More from Semiconductors

Pick out the correct statement from the following; 2026What is the minimum wavelength of radiation required to detect a p-n junction diode made of a semiconductor having band gap 3.3 eV. [Planck's constant h = 6.6 10³⁴ J.s ] 2026Genetic Engineering is related to the principle of 2026A silicon sample is doped simultaneously with donor impurity phosphorus at a concentration of N_D = 3 10²² m⁻³ and acceptor impurity boron at a concentration of N_D = 2.8 10²² m⁻³ 2026In a PN junction diode, the forward bias is increased gradually from 0 Volt to 1 Volt. Which of the following statements is correct? 2026In the circuit given, the reverse breakdown voltage of the Zener diode is 4.8 V. The current through the Zener and the power dissipation in Zener is: 2026An n-type and p-type semiconductor can be obtained by respectively doping pure silicon with 2026In which of the following figures, diode is reverse biased? 2026 Full Semiconductors list All AP EAMCET PYQs