In a p-n junction diode, the thickness of deplection layer is 2 10⁻⁶ ~m and barrier potential is 0.3 ~V . The intensity of the electric field at the junction is

Step-by-step solution

Here, the barrier voltage, V=0.3 volt and the width of depletion layer, d=2 10⁻⁶ ~m Electric field at the junction, aligned E & = V d = 0.3 ~V 2 10⁻⁶ ~m & =1.5 10^5 ~V / m aligned The direction of electric field is from n -type to p -type.