An intrinsic semiconductor has equal concentrations of hole and electron which is equal to 4 10^8 ~m ⁻³ . During its conversion to extrinsic semiconductor, concentration of hole increases to 8 10¹⁰ ~m ⁻³ . The new electron concentration is:

Step-by-step solution

For an intrinsic semiconductor, the intrinsic carrier concentration n_i is given by n_i = n_e = n_h = 4 10^8 m ⁻³ . The law of mass action for semiconductors states that the product of electron concentration n_e and hole concentration n_h in an extrinsic semiconductor remains constant and equal to the square of the intrinsic carrier concentration: n_e n_h = n_i^2 Given the new hole concentration n_h = 8 10¹⁰ m ⁻³ , we substitute the values into the equation: n_e (8 10¹⁰) = (4 10^8)^2 n_e (8 10¹⁰) = 16 10¹⁶ n_e = 16