A semiconductor X is made by doping silicon with phosphorous. A second semiconductor Y is made by doping silicon with aluminium. The two are joined by a suitable technique to form a p - n junction and is connected to a battery such that Y is joined to negative of the battery and X to the positive of the battery. Which of the following statements is correct?

Step-by-step solution

Silicon doped with phosphorous (a pentavalent impurity) forms an n-type semiconductor, denoted as X. Silicon doped with aluminium (a trivalent impurity) forms a p-type semiconductor, denoted as Y. The junction formed is a p-n junction where Y is the p-side and X is the n-side. The p-side (Y) is connected to the negative terminal of the battery, and the n-side (X) is connected to the positive terminal of the battery. This configuration corresponds to reverse biasing of the p-n junction. In reverse bias, the potentia