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IAT IISER2023PhysicsSemiconductors

The intrinsic electron and hole concentrations of a Si-based intrinsic semiconductor are n_e^ (0) and n_h^ (0) , respectively. Upon doping with trivalent impurities the respective carrier concentrations become n_e and n_h . Which of the following options is true?

Options

  1. An_e=n_h
  2. Bn_h n_h^ (0)
  3. Cn_e n_e^ (0)
  4. Dn_e^ (0) and n_h^ (0) are independent of temperature.

Correct answer

B. n_h n_h^ (0)

Step-by-step solution

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