A semiconductor has equal electron and hole concentration of 2 10^8 ~m ⁻³ . On doping with a certain impurity, the electron concentration increases to 4 10¹⁰ ~m ⁻³ , then the new hole concentration of the semiconductor is

Step-by-step solution

Electron concentration, n_e=2 10^8 ~m ⁻³ Hole concentration, n_h=2 10^8 ~m ⁻³ After doping with a impurity, the new electron concentration, n_e^ =4 10¹⁰ ~m ⁻³ New hole concentration, n_h^ = ? We know that, n_e n_h=n_i^2 array ll and & n_e^ n_h^ =n_i^2 & n_e n_h=n_e^ n_h^ & n_h^ = n_e n_h n_e^ = 2 10^8 2 10^8 4 10¹⁰ / m ^3=10^6 / m ^3 & n_h^ =10^6 ~m ⁻³ array