In a semiconductor, the number density of intrinsic charge carriers at 27 ° C is 1 . 5 × 10 16 m - 3 . If the semiconductor is doped with an impurity atom, the hole density increases to 4 . 5 × 10 22 m - 3 . The electron dens

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In a semiconductor, the number density of intrinsic charge carriers at 27 &#176; C is 1 . 5 &#215; 10 16 m - 3 . If the semiconductor is doped with an impurity atom, the hole density increases to 4 . 5 &#215; 10 22 m - 3 . The electron density in the doped semiconductor is _______ &#215; 10 9 m - 3

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n e n h = n i 2 n e = n i 2 n h = 1 . 5 &#215; 10 16 2 4 . 5 &#215; 10 22 = 1 . 5 &#215; 1 . 5 &#215; 10 32 4 . 5 &#215; 10 22 5 &#215; 10 9 &#160; m - 3

In a semiconductor, the number density of intrinsic charge carriers at 27 ° C is 1 . 5 × 10 16 m - 3 . If the semiconductor is doped with an impurity atom, the hole density increases to 4 . 5 × 10 22 m - 3 . The electron density in the doped semiconductor is _______ × 10 9 m - 3

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In a semiconductor, the number density of intrinsic charge carriers at 27 &#176; C is 1 . 5 &#215; 10 16 m - 3 . If the semiconductor is doped with an impurity atom, the hole density increases to 4 . 5 &#215; 10 22 m - 3 . The electron density in the doped semiconductor is _______ &#215; 10 9 m - 3

Correct answer

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In a semiconductor, the number density of intrinsic charge carriers at 27 ° C is 1 . 5 × 10 16 m - 3 . If the semiconductor is doped with an impurity atom, the hole density increases to 4 . 5 × 10 22 m - 3 . The electron density in the doped semiconductor is _______ × 10 9 m - 3