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JEE Main202122 Jul 2021Morning ShiftPhysicsSemiconductorsActual

Consider a situation in which reverse biased current of a particular P - N junction increases when it is exposed to a light of wavelength ≤ 621 nm . During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.

Options

  1. A2   eV
  2. B4   eV
  3. C1   eV
  4. D0 . 5   eV

Correct answer

A. 2   eV

Step-by-step solution

Band gap = h c λ 0 , where λ 0 - threshold wavelength Band gap = 1242   ev - nm 621   nm = 2   eV

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