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KCET2025PhysicsSemiconductors

Which of the following statements is correct for an n-type semiconductor?

Options

  1. AThe donor energy level lies closely above the top of the valance band
  2. BThe donor energy level lies at the half way mark of forbidden energy gap
  3. CThe donor energy level does not exist
  4. DThe donor energy level lies just the bottom of the conduction band

Correct answer

D. The donor energy level lies just the bottom of the conduction band

Step-by-step solution

In an n-type semiconductor, donor impurities contribute electron energy levels high in the semiconductor band gap, allowing electrons to be easivy excited into the conduction b and. This donar level is located closed to, and just below, the bottom of the conduction band.

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