Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
KVPY2020PhysicsSemiconductors

A solar cell is to be fabricated for efficient conversion of solar radiation to emf using material A . The solar cell is to be mechanically protected with the help of a coating using material B . If the band gap energy of materials A and B are E A and E B respectively, then which of the following choices is optimum for better performance of the solar cell.

Options

  1. AE A = 1 . 5 e V ,   E B = 5 e V
  2. BE A = 1 . 5 e V ,   E B = 1 . 5 e V
  3. CE A = 3 e V ,   E B = 1 . 5 e V
  4. DE A = 0 . 5 e V ,   E B = 5 e V

Correct answer

A. E A = 1 . 5 e V ,   E B = 5 e V

Step-by-step solution

Generally we want the electron to cross energy gaps in material A . Not in material- B because its just covering. And E in the A should not be very small otherwise there will be huge heat loss because of large difference in E g and energy of incident photon

Practice Semiconductors on Quantrex Academy →

More from Semiconductors

Pick out the correct statement from the following; 2026What is the minimum wavelength of radiation required to detect a p-n junction diode made of a semiconductor having band gap 3.3 eV. [Planck's constant h = 6.6 10³⁴ J.s ] 2026Genetic Engineering is related to the principle of 2026A silicon sample is doped simultaneously with donor impurity phosphorus at a concentration of N_D = 3 10²² m⁻³ and acceptor impurity boron at a concentration of N_D = 2.8 10²² m⁻³ 2026In a PN junction diode, the forward bias is increased gradually from 0 Volt to 1 Volt. Which of the following statements is correct? 2026In the circuit given, the reverse breakdown voltage of the Zener diode is 4.8 V. The current through the Zener and the power dissipation in Zener is: 2026An n-type and p-type semiconductor can be obtained by respectively doping pure silicon with 2026In which of the following figures, diode is reverse biased? 2026 Full Semiconductors list All KVPY PYQs