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MHT CET202617 April 2026Evening ShiftPhysicsSemiconductorsActual

A semiconductor X is made by doping a germanium crystal with indium (Z = 49) . A second semiconductor Y is made by doping germanium crystal with arsenic (Z = 33) . Both are joined end to end and connected to a battery as shown. Which of the following statements is correct?

Options

  1. AX is p-type, Y is n-type and the junction is forward biased.
  2. BX is p-type, Y is n-type and the junction is reverse biased.
  3. CX is n-type, Y is p-type and the junction is forward biased.
  4. DX is n-type, Y is p-type and the junction is reverse biased.

Correct answer

A. X is p-type, Y is n-type and the junction is forward biased.

Step-by-step solution

Germanium is a Group 14 element with a valency of 4. Semiconductor X is doped with Indium ( Z = 49 ), which is a Group 13 element and a trivalent impurity. Doping a semiconductor with a trivalent impurity creates holes as majority charge carriers, making it a p-type semiconductor. Thus, X is p-type. Semiconductor Y is doped with Arsenic ( Z = 33 ), which is a Group 15 element and a pentavalent impurity. Doping with a pentavalent impurity provides extra electrons as majority charge carriers, making it an n-type semi

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