For a p-n junction diode, breakdown voltage occurs when

Step-by-step solution

In a p-n junction diode, when the reverse bias voltage is increased, the width of the depletion region and the electric field across it increase. At a sufficiently high reverse bias voltage, the electric field becomes strong enough to break covalent bonds (Zener breakdown) or accelerate minority carriers to cause impact ionization (avalanche breakdown). This leads to a sudden and sharp increase in the reverse current, which is known as the breakdown voltage. Therefore, breakdown occurs when the reverse bias is incr