If p-n junction diode is forward biased, then

Step-by-step solution

Under forward bias, the applied electric field opposes the junction's internal field, reducing both the potential barrier and the depletion width. The barrier voltage decreases from V_b to V_b - V_a , where V_a is the forward bias. Majority carrier diffusion increases, narrowing the depletion region. Statement A claims electric conduction is impossible, which contradicts forward bias behavior. Statement C incorrectly describes depletion layer widening under reverse bias. Statement D claims barrier voltage increases