In the depletion layer of reverse biased p-n junction, the

Step-by-step solution

The depletion layer in a p-n junction arises from carrier diffusion, leaving immobile donor and acceptor ions that establish an electric field and potential barrier. Under reverse bias, the applied voltage increases the depletion layer width, separating charges further and consequently strengthening the electric field. This field is concentrated within the depletion region, directed from n-type to p-type material. The neutral p and n regions exhibit negligible field strength, while the potential barrier varies acro