Pure Silicon crystal at 300 ~K has equal electron and hole concentration of 1.5 10¹⁶ ~m ⁻³ . Doping by indium increases n_h=4.5 10²² ~m ⁻³ . The n_e in the doped silicon is:

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Correct answer: A. 5 10^9

In an extrinsic semiconductor: aligned & n_e n_h= (n_i )^2 & n_e 4.5 10²²= (1.5 10¹⁶ )^2 & n_e= 2.25 10³² 4.4 10²² & n_e=5 10^9 aligned

Pure Silicon crystal at 300 ~K has equal electron and hole concentration of 1.5 10¹⁶ ~m ⁻³ . Doping by indium increases n_h=4.5 10²² ~m ⁻³ . The n_e in the doped silicon is:

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