In a pure silicon, number of electrons and holes per unit volume are 1.6 10¹⁶ ~m ⁻³ . If silicon is doped with Boron in a way that on doping hole density increases to 4 10²² ~m ⁻³ . Then electron density in doped semiconductor will be

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Correct answer: B. 6.4 10^9 ~m ⁻³

aligned & n _ i =1.6 10¹⁶ ~m ⁻³, n _ h =4 10²² ~m ⁻³ & n _ e n _ h = n _ i ^2 & n _ e = n _ i ^2 n _ h = (1.6 10¹⁶ )^2 4 10²² = 1.6 1.6 10³² 4 10²² & =6.4 10^9 ~m ⁻³ aligned

In a pure silicon, number of electrons and holes per unit volume are 1.6 10¹⁶ ~m ⁻³ . If silicon is doped with Boron in a way that on doping hole density increases to 4 10²² ~m ⁻³ . Then electron density in doped semiconductor will be

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