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Which of the following statements is correct regarding a p-n junction diode under reverse bias condition?

Options

  1. AThe width of the depletion region decreases.
  2. BThe barrier potential across the junction increases.
  3. CThe majority charge carriers are pushed towards the junction.
  4. DThe diode offers a very low resistance to the flow of current.

Correct answer

B. The barrier potential across the junction increases.

Step-by-step solution

In a p-n junction diode under reverse bias, the positive terminal of the external voltage source is connected to the n-region and the negative terminal to the p-region. This applied voltage pulls the majority charge carriers (electrons in the n-region and holes in the p-region) away from the junction. As a result, the width of the depletion region increases. The applied reverse voltage acts in the same direction as the built-in potential, which means the effective barrier potential across the junction increases. Be

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