NEET2026PhysicsChapterActual
Identify the incorrect statement regarding a p - n junction diode.
Options
- AThe formation of the depletion region is primarily due to the diffusion of majority charge carriers.
- BUnder reverse bias, the applied external voltage supports the built-in potential barrier.
- CThe drift current across the junction is mainly due to the movement of majority charge carriers.
- DForward biasing the diode reduces the effective width of its depletion layer.
Correct answer
C. The drift current across the junction is mainly due to the movement of majority charge carriers.
Step-by-step solution
In a p - n junction diode, the drift current is caused by the movement of minority charge carriers across the depletion region under the influence of the built-in electric field. The diffusion current is due to the movement of majority charge carriers driven by the concentration gradient. Therefore, the statement that drift current is mainly due to the movement of majority charge carriers is incorrect. The other statements are correct: The depletion region is formed by the diffusion of majority carriers. Reverse bi