Given below are two statements: Statement I: When a p-n junction diode is reverse biased, the reverse current is almost independent of the applied voltage up to the breakdown voltage. Statement II: The reverse current in a p-n junction diode is primarily due to the drift of majority charge carriers. In the light of the above statements, choose the most appropriate answer from the options given below:

Step-by-step solution

In a reverse-biased p-n junction diode, the reverse current is the reverse saturation current, which is almost independent of the applied voltage up to the breakdown voltage. Thus, Statement I is correct. The reverse current is primarily due to the drift of minority charge carriers (electrons in the p-side and holes in the n-side) across the junction, not majority charge carriers. Thus, Statement II is incorrect. Answer: Statement I is correct but Statement II is incorrect