Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
NEST2025PhysicsSemiconductors

A p-n junction diode in a circuit is in reverse bias but not under breakdown condition. As compared to the p-n junction diode in a forward bias,

Options

  1. Athe depletion layer width increases.
  2. Bthe barrier potential decreases.
  3. Cthe current enhances significantly across the junction.
  4. Dthe electric field across the junction changes sign.

Correct answer

A. the depletion layer width increases.

Step-by-step solution

No Solution

Practice Semiconductors on Quantrex Academy →

More from Semiconductors

Pick out the correct statement from the following; 2026What is the minimum wavelength of radiation required to detect a p-n junction diode made of a semiconductor having band gap 3.3 eV. [Planck's constant h = 6.6 10³⁴ J.s ] 2026Genetic Engineering is related to the principle of 2026A silicon sample is doped simultaneously with donor impurity phosphorus at a concentration of N_D = 3 10²² m⁻³ and acceptor impurity boron at a concentration of N_D = 2.8 10²² m⁻³ 2026In a PN junction diode, the forward bias is increased gradually from 0 Volt to 1 Volt. Which of the following statements is correct? 2026In the circuit given, the reverse breakdown voltage of the Zener diode is 4.8 V. The current through the Zener and the power dissipation in Zener is: 2026An n-type and p-type semiconductor can be obtained by respectively doping pure silicon with 2026In which of the following figures, diode is reverse biased? 2026 Full Semiconductors list All NEST PYQs