Q: A full wave rectifier circuit with diodes (D_1 ) and (D_2 ) is shown in the figure. If input supply voltage V_ in =220 (100 t) volt, then at t=15 msec

aligned & At t =15 msec \\ & V _ in =220 (100 15 10^ -3 ) \\ & =220 ( 3 2 )=-220 ~V aligned So diode D_1 is in reverse bias and D_2 is in forward bias

Q: The output ( Y ) of the given logic implementation is similar to the output of an/a _____ gate.

Y =( A + B ) ( A B ) aligned & A B ( A + B ) \\ & A B A + A B B \\ & A B + A B \\ & A B =( A + B ) aligned Behaves as NOR gate

Q: A logic circuit provides the output Y as per the following truth table : array |l|l|l| & B & Y \\ 0 & 0 & 1 \\0 & 1 & 0 \\1 & 0 & 1 \\1 & 1 & 0 \\ array The expression for the output Y is :

array |l|l|l| & B & Y \\ 0 & 0 & 1 \\0 & 1 & 0 \\1 & 0 & 1 \\1 & 1 & 0 \\ array According to given truth table, output is independent on value of A Output Y= B

Q: The output ( Y ) of the given logic gate is similar to the output of an/a

aligned Y_1 & = A A \\ & = A \\ Y_2 & = B+B \\ & = B aligned aligned Y & = Y_1+Y_2 \\ & = A + B \\ & = A B aligned =A B is similar to output of AND Gate

Question 1

An ideal Zener diode with breakdown voltage of -3 V is reverse biased with a negative input voltage V_i=-5 V. The magnitude of voltage difference between points B and A is :

Accepted Answer

Given that the Zener diode is reverse biased with an input voltage of magnitude |V_i| = 5 V. The breakdown voltage of the ideal Zener diode is |V_Z| = 3 V. Since the applied voltage is greater than the Zener breakdown voltage (5 V > 3 V), the Zener diode operates in the breakdown region. In the breakdown region, the voltage drop across the ideal Zener diode remains constant at its breakdown voltage. Therefore, the potential difference between points C and B is V_ CB = 3 V. The total voltage is a

Question 2

The current I in the circuit shown below is : (All diodes are ideal and identical)

Accepted Answer

From the given circuit, the positive terminal of the 10 V battery is connected to the left side of the parallel branches. Therefore, the left side is at a higher potential compared to the right side. The diodes in the branches with 4\ and 2\ resistors have their anodes connected to the higher potential side, so they are forward-biased and act as short circuits (since they are ideal). The diodes in the branches with 3\ and 5\ resistors have their cathodes connected to the higher potential side, s

Question 3

In the circuit shown below, the voltage appearing across the diode D will be of the form :

Accepted Answer

Voltage drop will be across the diode, when it will be in reverse bias 1 In positive half cycle it will be in reverse biased

Question 4

Two statements are given below : A. When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases significantly. B. This current is

Accepted Answer

Statement A describes the behavior of a p-n junction diode under forward bias. When the applied voltage exceeds the threshold voltage (or cut-in voltage), the potential barrier is overcome, and the forward current increases exponentially. Thus, Statement A is true. Statement B claims this current is the reverse saturation current. This is incorrect because the current flowing under forward bias is the forward current. Reverse saturation current is a very small current that flows under reverse bi

Question 5

Three identical p-n junction diodes D_1, D_2 and D_3 are connected across a battery as shown in the figure. If the width of the depletion regions of D_1, D_2 and D_3 are W_1, W_2 and W_3, respectively

Accepted Answer

From the given circuit diagram, we can determine the biasing of each diode by observing their connections to the battery. The battery symbol has its longer line on the left and shorter, thicker line on the right. This indicates that the left side of the circuit is connected to the positive terminal and the right side to the negative terminal. 1. For diode D_1: The p-side (triangle) is connected to the positive terminal (via a resistor) and the n-side (straight line) is connected to the negative

Question 6

A full wave rectifier circuit with diodes (D_1 ) and (D_2 ) is shown in the figure. If input supply voltage V_ in =220 (100 t) volt, then at t=15 msec

Accepted Answer

aligned & At t =15 msec \ & V _ in =220 (100 15 10^ -3 ) \ & =220 ( 3 2 )=-220 ~V aligned So diode D_1 is in reverse bias and D_2 is in forward bias

Question 7

The output ( Y ) of the given logic implementation is similar to the output of an/a _____ gate.

Accepted Answer

Y =( A + B ) ( A B ) aligned & A B ( A + B ) \ & A B A + A B B \ & A B + A B \ & A B =( A + B ) aligned Behaves as NOR gate

Question 8

When the output of an OR gate is applied as input to a NOT gate, then the combination acts as a

Accepted Answer

When the output of an OR gate is applied as jnput to a NOT gate, then the combination acts as NOR gate.

Question 9

The output Y for the inputs A and B of the given logic circuit is :

Accepted Answer

Y= A B =A+B

Question 10

A logic circuit provides the output Y as per the following truth table : array |l|l|l| & B & Y \ 0 & 0 & 1 \0 & 1 & 0 \1 & 0 & 1 \1 & 1 & 0 \ array The expression for the output Y is :

Accepted Answer

array |l|l|l| & B & Y \ 0 & 0 & 1 \0 & 1 & 0 \1 & 0 & 1 \1 & 1 & 0 \ array According to given truth table, output is independent on value of A Output Y= B

Question 11

The output ( Y ) of the given logic gate is similar to the output of an/a

Accepted Answer

aligned Y_1 & = A A \ & = A \ Y_2 & = B+B \ & = B aligned aligned Y & = Y_1+Y_2 \ & = A + B \ & = A B aligned =A B is similar to output of AND Gate

Question 12

The I-V characteristics shown above are exhibited by a

Accepted Answer

The I-V characteristics of solar cell is

Question 13

Consider the following statements A and B and identify the correct answer: A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph. B. In a reverse biased pn junction d

Accepted Answer

A: Solar cell characteristics B: In reverse biased p n junction diode, the current measured in ( A ), is due to minority charge carrier.

Semiconductors — Previous Year Questions & Solutions