In a p-n junction diode, the current (i) varies with applied biasing voltage (V) and can be expressed as i=i_0 (e^ q V/ kT -1) where i _ 0 = 5 ×10^ -12 ~A is reverse saturation current, k is Boltzmann constant and q is

Olympiad workbook

Olympiad workbook · NSEP · Semiconductors

In a p-n junction diode, the current (i) varies with applied...

In a p-n junction diode, the current (i) varies with applied biasing voltage (V) and can be expressed as

i=i_0

\left(e^{ \mathrm{q} \mathrm{V}/

\mathrm{kT}}-1\right)

where

\mathrm{i}}_{0}=

5 \times10^{-12} \mathrm{~A}

is reverse saturation current, k is Boltzmann constant and

q is the charge on the electron At Absolute Temperature

\mathrm{T}=300 \mathrm{~K}

AThe forward current is approximately 59.5 mA for a forward bias of 0.6 volt
BThe current increases approximately by 2.75 A if the biasing voltage changes from 0.6 V to 0.7 V
CThe dynamic resistance of p-n junction is approximately $435 \mathrm{~m} \Omega$ at the biasing voltage of 0.6 V
DThe change in reverse bias current when biasing voltage change from -1 volt to -2 volt happens to be practically zero.

D. The change in reverse bias current when biasing voltage change from -1 volt to -2 volt happens to be practically zero.

No solution