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Semiconductors — JEE Main & Advanced NSEP PYQs

17 previous year questions from Semiconductors with answers and solutions. Numbered list, year tags, and one-tap solutions — built for serious JEE / NEET practice.

17 questionsNSEPSolutions on every page
1

An ac source (sinusoidal source with frequency 50 Hz ) is connected in series with a rectifying diode, a 100 resistor, a 1000 ~F capacitor and a milliammeter. After some time the m

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The fundamental frequency of the output of a bridge rectifier driven by ac mains is

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Which one of the following devices does not respond to the intensity of light incident on it?

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A simple laboratory power supply consists of a transformer, bridge rectifier and a filter capacitor. It drives a suitable load. If due to some reason one of the diodes in the recti

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Magnified, erect and virtual

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In a photodiode the reverse current increases when exposed to light of wavelength 620 nm or less. The band gap of the semiconductor used is

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The adjacent figure shows I - V characteristics of a silicon diode. In this connection three statements are made - (I) the region OC corresponds to reverse bias of the diode, (II)

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In the network shown below the voltage V₀ is nearly

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For the Boolean equation Y=A B+A(B+C)+B(B+C)+ B , which of the following statements is correct?

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Refer to the common emitter amplifier circuit shown below, using a transistor with =80 and V_ BE =0.7 volt. The value of resistance R_ B is

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Avalanche breakdown in a p-n junction primarily depends on the phenomenon of

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The dc component of current in the output of a half-wave rectifier with peak value I₀ is

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In a p-n junction diode, the current (i) varies with applied biasing voltage (V) and can be expressed as i=i₀ (e^ q V / kT -1 ) where i ₀=5 10⁻¹² ~A is reverse saturation current,

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Statement I: The current flowing through a p-n junction is more in forward bias than that in the reverse bias. Statement II: The diffusion current, dominant in forward bias, is mor

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A potential of 5 V is applied across the faces of a pure germanium plate of area 2 10⁻⁴ ~m ^2 and of thickness 1.2 10⁻³ ~m . Concentration of carriers in germanium at room temperat

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The electrical conductivity of a sample of semiconductor is found to increase when the electromagnetic radiation of wave length just shorter than 2480 nm is incident normally on it

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In the working of a p-n junction

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