Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
Olympiad workbookNSEPSemiconductors

A potential of 5 V is applied across the faces of a pure germanium plate of area 2 10⁻⁴ ~m ^2 and of thickness 1.2 10⁻³ ~m . Concentration of carriers in germanium at room temperature is 1.6 10^6 ~m ⁻³ , Mobility of electrons and holes are 0.4 ~m ^2 ~V ⁻¹ ~s ⁻¹ and 0.2 ~m ^2 ~V ⁻¹ ~s ⁻¹ respectively. The current produced in germanium plate at room temperature, is

Options

  1. A1.28 10⁻¹³ ~A
  2. B1.28 10⁻⁹ ~A
  3. C1.536 10⁻¹³ ~A
  4. D6.4 10⁻¹⁰ ~A

Correct answer

A. 1.28 10⁻¹³ ~A

Step-by-step solution

No Solution

Practice Semiconductors on Quantrex Academy →

More from Semiconductors

An ac source (sinusoidal source with frequency 50 Hz ) is connected in series with a rectifying diode, a 100 resistor, a 1000 ~F capacitor and a milliammeter. After some time the mThe fundamental frequency of the output of a bridge rectifier driven by ac mains isWhich one of the following devices does not respond to the intensity of light incident on it?A simple laboratory power supply consists of a transformer, bridge rectifier and a filter capacitor. It drives a suitable load. If due to some reason one of the diodes in the rectiMagnified, erect and virtualIn a photodiode the reverse current increases when exposed to light of wavelength 620 nm or less. The band gap of the semiconductor used isThe adjacent figure shows I - V characteristics of a silicon diode. In this connection three statements are made - (I) the region OC corresponds to reverse bias of the diode, (II) In the network shown below the voltage V₀ is nearly Full Semiconductors list All Olympiad workbook PYQs