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JEE Main 20198 AprilEvening Shift
Exam
JEE Main
Year
2019
Date
8 April
Shift
Evening Shift
Subject
Physics
Chapter
Semiconductors

JEE Main 2019 · 8 April · Evening Shift · Physics · Semiconductors

A common emitter amplifier circuit, built using an NPN transistor,...

A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is 250250, RC=1kΩ{R}_{C} = 1kΩ and VCC=10V{V}_{CC} = 10V . The minimum base current for VCE{V}_{CE} to reach saturation is

A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is 250 ,

Options

  1. A10\muA10\muA
  2. B40\muA40\muA
  3. C7\muA7\muA
  4. D100\muA100\muA

Correct answer

B. 40\muA40\muA

Step-by-step solution

A common emitter amplifier circuit, built using an NPN transistor, is shown in the figure. Its dc current gain is 250 ,

Given, β=250\beta = 250

RC=1000Ω{R}_{C} = 1000Ω

VCC=10V{V}_{CC} = 10V


At saturation, VCE=0{V}_{CE} = 0

⇒ie=10V1000Ω=10mA⇒ {i}_{e} = \dfrac{10V}{1000Ω} = 10mA

Current gain factor, β=ieiB\beta = \dfrac{{i}_{e}}{{i}_{B}}

⇒iB=ieβ=10mA250⇒ {i}_{B} = \dfrac{{i}_{e}}{\beta} = \dfrac{10mA}{250}

=40\muA= 40\muA

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