Given that the mobility of electrons in Ge is 0.4 ~m ^2 ~V ⁻¹ ~s ⁻¹ and electronic charge is 1.6 10⁻¹⁹ C . The number of donor atom ( . per m ^3 ) semiconductor of conductivity 500 mho / m is

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Correct answer: A. 8 10²¹

U sing , =n_e q _e Here, =500 mho / m e=1.6 10⁻¹⁹ C _e=0.4 ~m ^2 ~V ⁻¹ ~s ⁻¹ n_e= 500 1.6 10⁻¹⁹ 0.4 =7.8 10²¹ 8 10²¹ ~m ⁻³

Given that the mobility of electrons in Ge is 0.4 ~m ^2 ~V ⁻¹ ~s ⁻¹ and electronic charge is 1.6 10⁻¹⁹ C . The number of donor atom ( . per m ^3 ) semiconductor of conductivity 500 mho / m is

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