Concepts Of Physics MCQ Edition [Volume 2]
- Exam
- Concepts Of Physics MCQ Edition [Volume 2]
- Subject
- Physics
- Chapter
- Semiconductors and Semiconductor Devices
Concepts Of Physics MCQ Edition [Volume 2] · Physics · Semiconductors and Semiconductor Devices
Determine the proportion of boron impurity required to increase the...
Determine the proportion of boron impurity required to increase the conductivity of a pure silicon sample by a factor of . Assume that each boron atom contributes one hole, and the concentration of holes in pure silicon at the same temperature is holes per cubic metre. The density of silicon is atoms per cubic metre.
Options
- A in
- B in
- C in
- D in
Correct answer
C. in
Step-by-step solution
The conductivity of pure (intrinsic) silicon is given by:
Assuming the mobilities of electrons and holes are approximately equal (), we get:
When boron (a trivalent impurity) is added, the silicon becomes a p-type semiconductor. The conductivity is predominantly due to holes:
where is the concentration of boron atoms.
Given that the conductivity increases by a factor of :
Substituting the given intrinsic hole concentration :
The density of silicon atoms is . The proportion of boron impurity required is:
To express this as part in :
Thus, the required proportion is in .
Answer: in
Assuming the mobilities of electrons and holes are approximately equal (), we get:
When boron (a trivalent impurity) is added, the silicon becomes a p-type semiconductor. The conductivity is predominantly due to holes:
where is the concentration of boron atoms.
Given that the conductivity increases by a factor of :
Substituting the given intrinsic hole concentration :
The density of silicon atoms is . The proportion of boron impurity required is:
To express this as part in :
Thus, the required proportion is in .
Answer: in