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JEE Semiconductors and Semiconductor Devices PYQs with Solutions

75 previous year questions from Semiconductors and Semiconductor Devices (JEE Main & Advanced Physics) with answers and solutions. Numbered list, year tags, and one-tap solutions — built for serious JEE / NEET practice.

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About Semiconductors and Semiconductor Devices PYQs

Semiconductors and Semiconductor Devices has 75 previous year questions in the Quantrex Academy JEE Main & Advanced Physics bank. The 75 questions in this list come from Concepts Of Physics MCQ Edition [Volume 2] (75). Each question opens on its own page with the options, the correct answer and the worked solution where available.

JEE Semiconductors and Semiconductor Devices PYQs with Solutions

About Semiconductors and Semiconductor Devices PYQs

Semiconductors and Semiconductor Devices questions with solutions

A pure semiconductor has 6 × 10^ 19 conduction electrons per cubic metre. Determine the number of holes present in a sample measuring 1 cm × 1 cm × 1 mm .

For silicon, the band gap is 1.1 eV . Determine the ratio of the band gap to kT for silicon at a room temperature of 300 K .

For silicon, the band gap is 1.1 eV . At what temperature does the ratio of the band gap to kT become one tenth of its value at 300 K ? (Silicon will not retain its structure at

Determine the number of states per cubic metre in the 3s band of sodium, given that its density is 1013 kg m^ -3 . Additionally, find how many of these states are empty.

When a semiconducting material is doped with an impurity, new acceptor levels are generated. During a specific thermal collision, a valence electron gains an energy equal to 2kT

The band gap between the valence and conduction bands for indium antimonide is 0.23 eV . Determine the temperature at which kT becomes equal to this band gap.

In zinc oxide (ZnO), the band gap between the valence and conduction bands is 3.2 eV . Assume that an electron in the conduction band recombines with a hole in the valence band

Determine the maximum wavelength of electromagnetic radiation capable of creating a hole-electron pair in germanium. The band gap of germanium is 0.65 eV .

When exposed to light, the conductivity of a photodiode material increases. It is observed that this change in conductivity happens only for wavelengths less than 620 nm .

Let Δ E designate the energy gap between the valence band and the conduction band. The population of conduction electrons (and of the holes) is roughly proportional to e^ -Δ E/2kT

The conductivity of a pure semiconductor is approximately proportional to T^ 3/2 e^ -Δ E/2kT , where Δ E represents the band gap. For germanium, the band gap is 0.74 eV at 4 K and

Determine the proportion of boron impurity required to increase the conductivity of a pure silicon sample by a factor of 100 . Assume that each boron atom contributes one hole

Assume that the energy released upon the recombination of a hole-electron pair is transformed into electromagnetic radiation. Determine the band gap if the maximum emitted

The product of the conduction electron concentration and the hole concentration remains independent of the quantity of any doped impurity. In pure germanium, the concentration of

The temperature dependence of the conductivity of an intrinsic semiconductor is given by σ = σ_0 e^ -Δ E/2kT , where σ_0 is a constant. Determine the temperature at which the

A p - n junction possesses a depletion region that is 400 nm wide, wherein an electric field of 5 × 10^5 V m^ -1 exists. Determine the height of the potential barrier.

A semiconducting material possesses a band gap of 1 eV . It is doped with acceptor impurities that establish acceptor levels 1 meV above the valence band. Suppose that a

A p - n junction possesses a depletion region that is 400 nm wide, wherein an electric field of 5 × 10^5 V m^ -1 exists. What is the minimum kinetic energy required for a

The potential barrier existing across an unbiased p - n junction is 0.2 volt . What minimum kinetic energy must a hole have to diffuse from the p -side to the n -side if the

The potential barrier existing across an unbiased p - n junction is 0.2 volt . What minimum kinetic energy must a hole have to diffuse from the p -side to the n -side if the

The potential barrier existing across an unbiased p - n junction is 0.2 volt . What minimum kinetic energy must a hole have to diffuse from the p -side to the n -side if the

A potential barrier of 250 meV exists across a p - n junction. A hole possessing a kinetic energy of 300 meV approaches the junction from the p -side. Determine the kinetic energy

A potential barrier of 250 meV exists across a p - n junction. A hole possessing a kinetic energy of 300 meV approaches the junction from the n -side. Determine the kinetic energy

When a p - n junction is reverse-biased, the current is nearly constant at 25 . Upon being forward-biased at 200 mV , a current of 75 is observed. Find the magnitude of the

When a p - n junction is reverse-biased, the current is nearly constant at 25 . Upon being forward-biased at 200 mV , a current of 75 is observed. Find the magnitude of the

When a p - n junction is reverse-biased, the current is nearly constant at 25 . Upon being forward-biased at 200 mV , a current of 75 is observed. Find the magnitude of the

The drift current in a p - n junction is given to be 20.0 . Estimate the number of electrons crossing a cross section per second within the depletion region.

An ideal p - n junction diode has a current-voltage characteristic described by i = i_0 \! (e^ eV/kT - 1) , in which the drift current i_0 is 10 \ muA.The temperature T is taken

An ideal p - n junction diode has a current-voltage characteristic described by i = i_0 \! (e^ eV/kT - 1) , in which the drift current i_0 is 10 \ muA.The temperature T is taken

An ideal p - n junction diode has a current-voltage characteristic described by i = i_0 \! (e^ eV/kT - 1) , in which the drift current i_0 is 10 \ muA.The temperature T is taken

A p - n junction diode has the characteristic i = i_0\! (e^ eV/kT - 1) where i_0 = 20 \ muA.The diode is operated at T = 300 K.Determine the current through the diode when a

A p - n junction diode has the characteristic i = i_0\! (e^ eV/kT - 1) where i_0 = 20 \ muA.The diode is operated at T = 300 K.If a forward bias voltage of 300 mV is initially

Determine the current flowing through the circuit and the potential difference across the diode as depicted in the figure. The drift current of the diode is 20 .

Every resistance shown in the figure has a value of 20 Ω . Determine the equivalent resistance between points A and B . Does this value depend on whether point A or B is at a

Determine the currents passing through the resistances in the circuits depicted in the figure.

Determine the readings of ammeters A_1 and A_2 depicted in the figure. Neglect the resistances of both meters.

Determine the current through the battery in the left and right circuits shown in the figure, respectively.

Determine the current through the resistance R in the figure if R = 12Ω .

Determine the current through the resistance R in the figure if R = 48Ω .

Consider the current–voltage characteristics for the devices shown in the figure between the terminals A and B . Assuming ideal diodes, determine the equivalent resistance of the

Determine the equivalent resistance between the points A and B for the network displayed in the figure.

If the base current of a transistor is altered from 30 to 80 , its collector current shifts from 1.0 mA to 3.5 mA . Determine the current gain β .

An amplifier circuit employs a transistor in common-emitter mode, with a load resistor of 2 kΩ connected in the collector branch. The transistor has a current gain β = 50 and an

An amplifier circuit employs a transistor in common-emitter mode, with a load resistor of 2 kΩ connected in the collector branch. The transistor has a current gain β = 50 and an

An amplifier circuit employs a transistor in common-emitter mode, with a load resistor of 2 kΩ connected in the collector branch. The transistor has a current gain β = 50 and an

Consider the expression X = A BC + B CA + C AB . Find the value of X if A = 1 , B = 0 , and C = 1 .

Consider the expression X = A BC + B CA + C AB . Find the value of X if A = B = C = 1 .

Consider the expression X = A BC + B CA + C AB . Find the value of X if A = B = C = 0 .

A logical circuit is designed using AND, OR, and NOT gates to evaluate the Boolean expression A BC + B CA . Which of the following is logically equivalent to the output of this

Determine the value of the Boolean expression AB + AB .

Suppose n_p and n_e represent the numbers of holes and conduction electrons, respectively, in an intrinsic semiconductor.

A semiconductor is subjected to an electric field. Suppose the number of charge carriers is n and their average drift speed is v . Upon increasing the temperature,

Electrical conduction within a semiconductor occurs due to

Upon doping an intrinsic semiconductor with an impurity, its conductivity

A p -type semiconductor is electrically

Suppose n_p and n_e denote the numbers of holes and conduction electrons in an extrinsic semiconductor.

In a p - n junction, the diffusion current is directed

Within a p - n junction, the drift current is directed

When a wire connects the two ends of a p - n junction,

In a p - n junction, the diffusion current exceeds the drift current in magnitude

At t = 0 , two identical capacitors A and B , each initially charged to a potential V , are connected in two separate circuits as illustrated in the figure. The respective charges

As illustrated in the figure, two identical p - n junctions can be connected in series with a battery in three different ways. The potential difference across the two p - n

In a p - n junction, a hole diffuses from the p -side to the n -side. This indicates that

Within a transistor,

Consider the following incomplete sentence regarding transistors: The emitter–…… junction is ___ and the collector– …… junction is ___. The proper words to fill the dotted empty

For a semiconductor,

For a p - n junction having open ends,

Within a p - n junction,

The impurity atoms that can be used to dope pure silicon to create a p -type semiconductor include those of

The electrical conductivity of pure germanium can be enhanced by

A semiconducting device is wired in a series circuit alongside a battery and a resistance. A current is observed to flow through the circuit. If the battery's polarity is

Suppose a semiconductor is doped with a donor impurity.

Suppose i_E , i_C , and i_B denote the emitter current, the collector current, and the base current, respectively, for a given transistor. Which of the following statements hold

During the normal operation of a transistor,

An AND gate can be constructed by the repeated use of

Related JEE Physics chapters

Consider the following incomplete sentence regarding transistors: The emitter–…… junction is _ and the collector– …… junction is _. The proper words to fill the dotted empty