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Semiconductors and Semiconductor Devices — JEE Main & Advanced Physics PYQs

75 previous year questions from Semiconductors and Semiconductor Devices with answers and solutions. Numbered list, year tags, and one-tap solutions — built for serious JEE / NEET practice.

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1

A pure semiconductor has 6 10¹⁹ conduction electrons per cubic metre. Determine the number of holes present in a sample measuring 1 cm 1 cm 1 mm .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 2

For silicon, the band gap is 1.1 eV . Determine the ratio of the band gap to kT for silicon at a room temperature of 300 K .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 3

For silicon, the band gap is 1.1 eV . At what temperature does the ratio of the band gap to kT become one tenth of its value at 300 K ? (Silicon will not retain its structure at th

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Determine the number of states per cubic metre in the 3s band of sodium, given that its density is 1013 kg m ⁻³ . Additionally, find how many of these states are empty.

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When a semiconducting material is doped with an impurity, new acceptor levels are generated. During a specific thermal collision, a valence electron gains an energy equal to 2kT ,

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The band gap between the valence and conduction bands for indium antimonide is 0.23 eV . Determine the temperature at which kT becomes equal to this band gap.

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In zinc oxide (ZnO), the band gap between the valence and conduction bands is 3.2 eV . Assume that an electron in the conduction band recombines with a hole in the valence band, re

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Determine the maximum wavelength of electromagnetic radiation capable of creating a hole-electron pair in germanium. The band gap of germanium is 0.65 eV .

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When exposed to light, the conductivity of a photodiode material increases. It is observed that this change in conductivity happens only for wavelengths less than 620 nm . Calculat

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Let E designate the energy gap between the valence band and the conduction band. The population of conduction electrons (and of the holes) is roughly proportional to e^ - E/2kT . D

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The conductivity of a pure semiconductor is approximately proportional to T^ 3/2 e^ - E/2kT , where E represents the band gap. For germanium, the band gap is 0.74 eV at 4 K and 0.6

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Determine the proportion of boron impurity required to increase the conductivity of a pure silicon sample by a factor of 100 . Assume that each boron atom contributes one hole, and

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Assume that the energy released upon the recombination of a hole-electron pair is transformed into electromagnetic radiation. Determine the band gap if the maximum emitted waveleng

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The product of the conduction electron concentration and the hole concentration remains independent of the quantity of any doped impurity. In pure germanium, the concentration of c

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The temperature dependence of the conductivity of an intrinsic semiconductor is given by = ₀ e^ - E/2kT , where ₀ is a constant. Determine the temperature at which the conductivity

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A p - n junction possesses a depletion region that is 400 nm wide, wherein an electric field of 5 10^5 V m ⁻¹ exists. Determine the height of the potential barrier.

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A semiconducting material possesses a band gap of 1 eV . It is doped with acceptor impurities that establish acceptor levels 1 meV above the valence band. Suppose that a transition

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A p - n junction possesses a depletion region that is 400 nm wide, wherein an electric field of 5 10^5 V m ⁻¹ exists. What is the minimum kinetic energy required for a conduction e

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The potential barrier existing across an unbiased p - n junction is 0.2 volt . What minimum kinetic energy must a hole have to diffuse from the p -side to the n -side if the juncti

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The potential barrier existing across an unbiased p - n junction is 0.2 volt . What minimum kinetic energy must a hole have to diffuse from the p -side to the n -side if the juncti

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The potential barrier existing across an unbiased p - n junction is 0.2 volt . What minimum kinetic energy must a hole have to diffuse from the p -side to the n -side if the juncti

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A potential barrier of 250 meV exists across a p - n junction. A hole possessing a kinetic energy of 300 meV approaches the junction from the p -side. Determine the kinetic energy

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A potential barrier of 250 meV exists across a p - n junction. A hole possessing a kinetic energy of 300 meV approaches the junction from the n -side. Determine the kinetic energy

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When a p - n junction is reverse-biased, the current is nearly constant at 25 A . Upon being forward-biased at 200 mV , a current of 75 A is observed. Find the magnitude of the dif

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 25

When a p - n junction is reverse-biased, the current is nearly constant at 25 A . Upon being forward-biased at 200 mV , a current of 75 A is observed. Find the magnitude of the dif

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When a p - n junction is reverse-biased, the current is nearly constant at 25 A . Upon being forward-biased at 200 mV , a current of 75 A is observed. Find the magnitude of the dif

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The drift current in a p - n junction is given to be 20.0 A . Estimate the number of electrons crossing a cross section per second within the depletion region.

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An ideal p - n junction diode has a current-voltage characteristic described by i = i₀ ! (e^ eV/kT - 1 ) , in which the drift current i₀ is 10 A . The temperature T is taken as 300

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An ideal p - n junction diode has a current-voltage characteristic described by i = i₀ ! (e^ eV/kT - 1 ) , in which the drift current i₀ is 10 A . The temperature T is taken as 300

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An ideal p - n junction diode has a current-voltage characteristic described by i = i₀ ! (e^ eV/kT - 1 ) , in which the drift current i₀ is 10 A . The temperature T is taken as 300

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A p - n junction diode has the characteristic i = i₀ ! (e^ eV/kT - 1 ) where i₀ = 20 A . The diode is operated at T = 300 K . Determine the current through the diode when a forward

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 32

A p - n junction diode has the characteristic i = i₀ ! (e^ eV/kT - 1 ) where i₀ = 20 A . The diode is operated at T = 300 K . If a forward bias voltage of 300 mV is initially appli

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 33

Determine the current flowing through the circuit and the potential difference across the diode as depicted in the figure. The drift current of the diode is 20 A .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 34

Every resistance shown in the figure has a value of 20 . Determine the equivalent resistance between points A and B . Does this value depend on whether point A or B is at a higher

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 35

Determine the currents passing through the resistances in the circuits depicted in the figure.

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 36

Determine the readings of ammeters A₁ and A₂ depicted in the figure. Neglect the resistances of both meters.

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 37

Determine the current through the battery in the left and right circuits shown in the figure, respectively.

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 38

Determine the current through the resistance R in the figure if R = 12 .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 39

Determine the current through the resistance R in the figure if R = 48 .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 40

Consider the current–voltage characteristics for the devices shown in the figure between the terminals A and B . Assuming ideal diodes, determine the equivalent resistance of the l

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 41

Determine the equivalent resistance between the points A and B for the network displayed in the figure.

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 42

If the base current of a transistor is altered from 30 A to 80 A , its collector current shifts from 1.0 mA to 3.5 mA . Determine the current gain .

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An amplifier circuit employs a transistor in common-emitter mode, with a load resistor of 2 k connected in the collector branch. The transistor has a current gain = 50 and an input

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An amplifier circuit employs a transistor in common-emitter mode, with a load resistor of 2 k connected in the collector branch. The transistor has a current gain = 50 and an input

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An amplifier circuit employs a transistor in common-emitter mode, with a load resistor of 2 k connected in the collector branch. The transistor has a current gain = 50 and an input

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 46

Consider the expression X = A BC + B CA + C AB . Find the value of X if A = 1 , B = 0 , and C = 1 .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 47

Consider the expression X = A BC + B CA + C AB . Find the value of X if A = B = C = 1 .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 48

Consider the expression X = A BC + B CA + C AB . Find the value of X if A = B = C = 0 .

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 49

A logical circuit is designed using AND, OR, and NOT gates to evaluate the Boolean expression A BC + B CA . Which of the following is logically equivalent to the output of this cir

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Determine the value of the Boolean expression AB + AB .

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Suppose n_p and n_e represent the numbers of holes and conduction electrons, respectively, in an intrinsic semiconductor.

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A semiconductor is subjected to an electric field. Suppose the number of charge carriers is n and their average drift speed is v . Upon increasing the temperature,

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 53

Electrical conduction within a semiconductor occurs due to

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 54

Upon doping an intrinsic semiconductor with an impurity, its conductivity

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A p -type semiconductor is electrically

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 56

Suppose n_p and n_e denote the numbers of holes and conduction electrons in an extrinsic semiconductor.

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In a p - n junction, the diffusion current is directed

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 58

Within a p - n junction, the drift current is directed

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When a wire connects the two ends of a p - n junction,

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In a p - n junction, the diffusion current exceeds the drift current in magnitude

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At t = 0 , two identical capacitors A and B , each initially charged to a potential V , are connected in two separate circuits as illustrated in the figure. The respective charges

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As illustrated in the figure, two identical p - n junctions can be connected in series with a battery in three different ways. The potential difference across the two p - n junctio

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 63

In a p - n junction, a hole diffuses from the p -side to the n -side. This indicates that

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 64

Within a transistor,

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 65

Consider the following incomplete sentence regarding transistors: The emitter–…… junction is ___ and the collector– …… junction is ___. The proper words to fill the dotted empty sp

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 66

For a semiconductor,

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 67

For a p - n junction having open ends,

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Within a p - n junction,

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The impurity atoms that can be used to dope pure silicon to create a p -type semiconductor include those of

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The electrical conductivity of pure germanium can be enhanced by

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A semiconducting device is wired in a series circuit alongside a battery and a resistance. A current is observed to flow through the circuit. If the battery's polarity is reversed,

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 72

Suppose a semiconductor is doped with a donor impurity.

Concepts Of Physics MCQ Edition [Volume 2] Solution View → 73

Suppose i_E , i_C , and i_B denote the emitter current, the collector current, and the base current, respectively, for a given transistor. Which of the following statements hold tr

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During the normal operation of a transistor,

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An AND gate can be constructed by the repeated use of

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