Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
Concepts Of Physics MCQ Edition [Volume 2]
Exam
Concepts Of Physics MCQ Edition [Volume 2]
Subject
Physics
Chapter
Semiconductors and Semiconductor Devices

Concepts Of Physics MCQ Edition [Volume 2] · Physics · Semiconductors and Semiconductor Devices

When a p - n junction is reverse-biased, the current is nearly...

When a pp-nn junction is reverse-biased, the current is nearly constant at 25μA25 \mu\text{A}. Upon being forward-biased at 200 mV200 \text{ mV}, a current of 75μA75 \mu\text{A} is observed. Find the magnitude of the diffusion current when the diode is reverse-biased at 200 mV200 \text{ mV}.

Options

  1. A50μA50 \mu\text{A}
  2. B100μA100 \mu\text{A}
  3. C00
  4. D25μA25 \mu\text{A}

Correct answer

C. 00

Step-by-step solution

The total current II in a pp-nn junction diode is given by the difference between the diffusion current and the drift current:

I=Idiffusion−IdriftI = I_{\text{diffusion}} - I_{\text{drift}}

The drift current is due to minority carriers and remains nearly constant. From the given data, the reverse-biased current is constant at 25μA25 \mu\text{A}, which gives:

Idrift=25μAI_{\text{drift}} = 25 \mu\text{A}

When the diode is reverse-biased, the potential barrier widens, preventing the diffusion of majority carriers across the junction. Consequently, the total current is almost entirely due to the drift current.

Thus, the total current in reverse bias is I≈−25μAI \approx -25 \mu\text{A}. Substituting this into the current equation:

−25μA=Idiffusion−25μA-25 \mu\text{A} = I_{\text{diffusion}} - 25 \mu\text{A}

Idiffusion=0I_{\text{diffusion}} = 0

The forward-bias data is extra information and is not required for this calculation.

Answer: 00
Practice Semiconductors and Semiconductor Devices on Quantrex Academy →

More from Semiconductors and Semiconductor Devices

A pure semiconductor has 6 × 10^ 19 conduction electrons per cubic metre. Determine the… Concepts Of Physics MCQ Edition [Volume 2]For silicon, the band gap is 1.1 eV . Determine the ratio of the band gap to kT for… Concepts Of Physics MCQ Edition [Volume 2]For silicon, the band gap is 1.1 eV . At what temperature does the ratio of the band gap… Concepts Of Physics MCQ Edition [Volume 2]Determine the number of states per cubic metre in the 3s band of sodium, given that its… Concepts Of Physics MCQ Edition [Volume 2]When a semiconducting material is doped with an impurity, new acceptor levels are… Concepts Of Physics MCQ Edition [Volume 2]The band gap between the valence and conduction bands for indium antimonide is 0.23 eV .… Concepts Of Physics MCQ Edition [Volume 2]In zinc oxide (ZnO), the band gap between the valence and conduction bands is 3.2 eV .… Concepts Of Physics MCQ Edition [Volume 2]Determine the maximum wavelength of electromagnetic radiation capable of creating a… Concepts Of Physics MCQ Edition [Volume 2] Full Semiconductors and Semiconductor Devices list All Concepts Of Physics MCQ Edition [Volume 2] PYQs