A semiconductor is subjected to an electric field. Suppose the number of charge carriers is n and their average drift speed is v . Upon increasing the temperature,

Step-by-step solution

When the temperature of a semiconductor is increased, more covalent bonds are broken due to thermal energy. This leads to an increase in the number of electron-hole pairs, so the number of charge carriers n increases. The average drift speed of charge carriers is given by v = E , where is the mobility and E is the applied electric field. The mobility is given by = e m , where is the relaxation time. As temperature increases, the thermal agitation of lattice ions increases, causing charge carriers to collide more fr