Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
Concepts Of Physics MCQ Edition [Volume 2]PhysicsSemiconductors and Semiconductor Devices

In a p - n junction, the diffusion current is directed

Options

  1. Afrom the n -side towards the p -side if forward-biased, and in the reverse direction if reverse-biased
  2. Bfrom the p -side towards the n -side if forward-biased, and in the reverse direction if reverse-biased
  3. Cfrom the p -side towards the n -side
  4. Dfrom the n -side towards the p -side

Correct answer

C. from the p -side towards the n -side

Step-by-step solution

In a p - n junction, the concentration of holes is higher in the p -region and the concentration of electrons is higher in the n -region. Due to this concentration gradient, holes diffuse from the p -side to the n -side, and electrons diffuse from the n -side to the p -side. The conventional current due to the flow of holes is in the direction of their motion (from p to n ), and the current due to the flow of electrons is opposite to their motion (also from p to n ). Thus, the diffusion current is always directed f

Practice Semiconductors and Semiconductor Devices on Quantrex Academy →

More from Semiconductors and Semiconductor Devices

A pure semiconductor has 6 10¹⁹ conduction electrons per cubic metre. Determine the number of holes present in a sample measuring 1 cm 1 cm 1 mm .For silicon, the band gap is 1.1 eV . Determine the ratio of the band gap to kT for silicon at a room temperature of 300 K .For silicon, the band gap is 1.1 eV . At what temperature does the ratio of the band gap to kT become one tenth of its value at 300 K ? (Silicon will not retain its structure at thDetermine the number of states per cubic metre in the 3s band of sodium, given that its density is 1013 kg m ⁻³ . Additionally, find how many of these states are empty.When a semiconducting material is doped with an impurity, new acceptor levels are generated. During a specific thermal collision, a valence electron gains an energy equal to 2kT , The band gap between the valence and conduction bands for indium antimonide is 0.23 eV . Determine the temperature at which kT becomes equal to this band gap.In zinc oxide (ZnO), the band gap between the valence and conduction bands is 3.2 eV . Assume that an electron in the conduction band recombines with a hole in the valence band, reDetermine the maximum wavelength of electromagnetic radiation capable of creating a hole-electron pair in germanium. The band gap of germanium is 0.65 eV . Full Semiconductors and Semiconductor Devices list All Concepts Of Physics MCQ Edition [Volume 2] PYQs