Concepts Of Physics MCQ Edition [Volume 2]
- Exam
- Concepts Of Physics MCQ Edition [Volume 2]
- Subject
- Physics
- Chapter
- Semiconductors and Semiconductor Devices
Concepts Of Physics MCQ Edition [Volume 2] · Physics · Semiconductors and Semiconductor Devices
Within a p - n junction, the drift current is directed
Within a - junction, the drift current is directed
Options
- Afrom the -side towards the -side
- Bfrom the -side towards the -side when the junction is forward-biased, and in the reverse direction when it is reverse-biased
- Cfrom the -side towards the -side
- Dfrom the -side towards the -side when the junction is forward-biased, and in the reverse direction when it is reverse-biased
Correct answer
C. from the -side towards the -side
Step-by-step solution
In a - junction, the depletion region contains uncovered positive donor ions on the -side and negative acceptor ions on the -side.
This charge distribution creates an internal electric field directed from the -side towards the -side.
The drift current is caused by the movement of minority charge carriers under the influence of this built-in electric field. Holes (minority carriers on the -side) are swept towards the -side, and electrons (minority carriers on the -side) are swept towards the -side.
The flow of positive charges from to and negative charges from to both contribute to a conventional current directed from the -side to the -side.
The direction of this drift current is independent of the external biasing.
This charge distribution creates an internal electric field directed from the -side towards the -side.
The drift current is caused by the movement of minority charge carriers under the influence of this built-in electric field. Holes (minority carriers on the -side) are swept towards the -side, and electrons (minority carriers on the -side) are swept towards the -side.
The flow of positive charges from to and negative charges from to both contribute to a conventional current directed from the -side to the -side.
The direction of this drift current is independent of the external biasing.