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Concepts Of Physics MCQ Edition [Volume 2]
Exam
Concepts Of Physics MCQ Edition [Volume 2]
Subject
Physics
Chapter
Semiconductors and Semiconductor Devices

Concepts Of Physics MCQ Edition [Volume 2] · Physics · Semiconductors and Semiconductor Devices

A potential barrier of 250 meV exists across a p - n junction. A...

A potential barrier of 250 meV250 \text{ meV} exists across a pp-nn junction. A hole possessing a kinetic energy of 300 meV300 \text{ meV} approaches the junction from the pp-side. Determine the kinetic energy of the hole after it crosses the junction.

Options

  1. A550 meV550 \text{ meV}
  2. B300 meV300 \text{ meV}
  3. C250 meV250 \text{ meV}
  4. D50 meV50 \text{ meV}

Correct answer

D. 50 meV50 \text{ meV}

Step-by-step solution

The potential barrier across a pp-nn junction opposes the motion of majority charge carriers. The electric field in the depletion region is directed from the nn-side to the pp-side.

When a hole (which acts as a positive charge) moves from the pp-side to the nn-side, it moves against the electric field and loses kinetic energy equal to the potential barrier energy.

By conservation of energy, the final kinetic energy KfK_{f} of the hole after crossing the junction is given by:

Kf=Ki−eV0K_{f} = K_{i} - e V_{0}

where KiK_{i} is the initial kinetic energy and eV0e V_{0} is the potential barrier energy.

Substituting the given values:

Kf=300 meV−250 meV=50 meVK_{f} = 300 \text{ meV} - 250 \text{ meV} = 50 \text{ meV}
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