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Concepts Of Physics MCQ Edition [Volume 2]
Exam
Concepts Of Physics MCQ Edition [Volume 2]
Subject
Physics
Chapter
Semiconductors and Semiconductor Devices

Concepts Of Physics MCQ Edition [Volume 2] · Physics · Semiconductors and Semiconductor Devices

The potential barrier existing across an unbiased p - n junction is...

The potential barrier existing across an unbiased pp-nn junction is 0.2 volt0.2 \text{ volt}. What minimum kinetic energy must a hole have to diffuse from the pp-side to the nn-side if the junction is reverse-biased at 0.1 volt0.1 \text{ volt}?

Options

  1. A0.1 eV0.1 \text{ eV}
  2. B0.3 eV0.3 \text{ eV}
  3. C0.2 eV0.2 \text{ eV}
  4. D0.4 eV0.4 \text{ eV}

Correct answer

B. 0.3 eV0.3 \text{ eV}

Step-by-step solution

The potential barrier of the unbiased pp-nn junction is V0=0.2 VV_0 = 0.2 \text{ V}.

When the junction is reverse-biased with a voltage VR=0.1 VV_R = 0.1 \text{ V}, the effective potential barrier increases.

The new potential barrier is given by V=V0+VR=0.2 V+0.1 V=0.3 VV = V_0 + V_R = 0.2 \text{ V} + 0.1 \text{ V} = 0.3 \text{ V}.

To diffuse from the pp-side to the nn-side, a hole (with charge +e+e) must overcome this potential barrier.

The minimum kinetic energy required is K=eV=e×0.3 V=0.3 eVK = eV = e \times 0.3 \text{ V} = 0.3 \text{ eV}.
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