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Concepts Of Physics MCQ Edition [Volume 2]
Exam
Concepts Of Physics MCQ Edition [Volume 2]
Subject
Physics
Chapter
Semiconductors and Semiconductor Devices

Concepts Of Physics MCQ Edition [Volume 2] · Physics · Semiconductors and Semiconductor Devices

The potential barrier existing across an unbiased p - n junction is...

The potential barrier existing across an unbiased pp-nn junction is 0.2 volt0.2 \text{ volt}. What minimum kinetic energy must a hole have to diffuse from the pp-side to the nn-side if the junction is unbiased?

Options

  1. A0.4 eV0.4 \text{ eV}
  2. B0.2 eV0.2 \text{ eV}
  3. C0.3 eV0.3 \text{ eV}
  4. D0.1 eV0.1 \text{ eV}

Correct answer

B. 0.2 eV0.2 \text{ eV}

Step-by-step solution

The potential barrier across the pp-nn junction is given as V=0.2 VV = 0.2 \text{ V}.

The nn-side of the junction is at a higher potential than the pp-side by 0.2 V0.2 \text{ V}.

For a hole (charge q=+eq = +e) to diffuse from the pp-side to the nn-side, it must overcome this potential barrier.

The minimum kinetic energy required by the hole is equal to the potential energy barrier it needs to cross.

K_{\text\min} = qV

K_{\text\min} = e \times 0.2 \text{ V} = 0.2 \text{ eV}
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