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Concepts Of Physics MCQ Edition [Volume 2]
Exam
Concepts Of Physics MCQ Edition [Volume 2]
Subject
Physics
Chapter
Semiconductors and Semiconductor Devices

Concepts Of Physics MCQ Edition [Volume 2] · Physics · Semiconductors and Semiconductor Devices

The potential barrier existing across an unbiased p - n junction is...

The potential barrier existing across an unbiased pp-nn junction is 0.2 volt0.2 \text{ volt}. What minimum kinetic energy must a hole have to diffuse from the pp-side to the nn-side if the junction is forward-biased at 0.1 volt0.1 \text{ volt}?

Options

  1. A0.3 eV0.3 \text{ eV}
  2. B0.2 eV0.2 \text{ eV}
  3. C0.1 eV0.1 \text{ eV}
  4. D0.05 eV0.05 \text{ eV}

Correct answer

C. 0.1 eV0.1 \text{ eV}

Step-by-step solution

The potential barrier of an unbiased pp-nn junction is V0=0.2 VV_0 = 0.2 \text{ V}.

When the junction is forward-biased, the applied voltage VfV_f opposes the potential barrier. The effective potential barrier becomes:

Veff=V0−VfV_{eff} = V_0 - V_f

Veff=0.2−0.1=0.1 VV_{eff} = 0.2 - 0.1 = 0.1 \text{ V}

For a hole (charge ee) to diffuse from the pp-side to the nn-side, its minimum kinetic energy must be equal to the energy required to overcome this effective potential barrier.

K_\min = e V_{eff}

K_\min = e(0.1 \text{ V}) = 0.1 \text{ eV}
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