NEET PYQ Semiconductors - Chapter-wise Questions with Solutions

About Semiconductors PYQs

Semiconductors has 404 previous year questions in the Quantrex Academy NEET UG Physics bank. The 220 questions in this list come from NEET (168), MHT CET Medical (33) and JIPMER (19), spanning 2002 to 2026. Each question opens on its own page with the options, the correct answer and the worked solution where available.

NEET Semiconductors PYQs with Solutions

About Semiconductors PYQs

Questions by year (this list)

Semiconductors questions with solutions

For two inputs A and B and output Y, the Boolean expression for NOR gate is

For an n-type semiconductor, the relation between the number density ' n_h ' and ' n_e ' is

A silicon crystal is doped with 5 × 10^ 17 \ cm^ -3 atoms of boron. The electron concentration (n_e) at room temperature is (n_i = 1.5 × 10^ 10 \ cm^ -3 )

If the current gain in common-base configuration (α ) of a transistor increases from 0.95 to 0.96, the percentage change in current gain in common-emitter configuration (β ) is

Out of the following what is used to detect the intensity of light ?

The color of light emitted by an LED is determined primarily by which of the following factors?

Which of the following is true for a p-type semiconductor?

In case of semiconductors, the band gap between the valence band and conduction band is

Below we give four entries for the truth table of two point input OR gate. Which two are wrong? array cccc & A & B & Y i & 1 & 0 & 1 ii & 1 & 1 & 0 iii & 0 & 0 & 1 iv & 0 & 1 & 1

The output of the logic circuit shown in figure will be

For a common emitter amplifier, the audio signal voltage across the collector resistance of 2\ kΩ is 4 V. If the current amplification factor of the transistor is 100 and the base

Which of the following statements is NOT TRUE ?

The potential barrier in p-n junction diode is due to

Current through a reverse biased p-n junction, increases abruptly at

Dark current in a photo-diode depends on the

In a common emitter amplifier circuit using n-p-n transistor, the phase difference between the input and output voltages will be

The truth table for the given circuit is

Which of the following LED emits red and yellow light?

Which of the following gives output 0 in the NAND gate?

A full-wave rectifier provides a DC output voltage of 20\ V . If the root mean square (RMS) value of the unwanted AC component is measured as 2\ V , the ripple factor in

The logic gate equivalent to given logic gate is

In good conductor, the gap between the valence band and the conduction band is

The depletion region of a p-n junction is formed due to

In the following combination of logic gates, the outputs (y,z) are respectively.

A p-n junction photodiode is fabricated from a semiconductor with a band gap of 4 × 10^ -19 J. It can detect a signal of wavelength [h = 6.6 × 10^ -34 Js , C = 3 × 10^8 m/s]

In semiconductors, at room temperature

The output characteristics of a transistor in CE mode is the graph obtained by plotting

A combination of logic gates is as shown in the figure. P, Q, R and S are the inputs and X, Y and Z are outputs. When inputs P and R are "low" and Q and S are "high", the outputs

Identify the INCORRECT statement

The components which are used in regulated power supply as rectifier, filter and voltage regulator are

To emit red or green light, LED is manufactured using

Which of the following statements is NOT true?

The below truth table corresponds to A B Y 0 0 1 1 0 1 0 1 1 1 1 0

An ideal Zener diode with breakdown voltage of -3 V is reverse biased with a negative input voltage V_i=-5 V. The magnitude of voltage difference between points B and A is :

The current I in the circuit shown below is : (All diodes are ideal and identical)

In the circuit shown below, the voltage appearing across the diode D will be of the form :

Two statements are given below : A. When the forward bias voltage across a p-n junction diode increases above a certain threshold voltage, the diode current increases

Three identical p-n junction diodes D_1 , D_2 and D_3 are connected across a battery as shown in the figure. If the width of the depletion regions of D_1 , D_2 and D_3 are W_1

A full wave rectifier circuit with diodes (D_1) and (D_2) is shown in the figure. If input supply voltage V_ in =220 (100 π t) volt, then at t=15 msec

The output (Y) of the given logic implementation is similar to the output of an/a _____ gate.

When the output of an OR gate is applied as input to a NOT gate, then the combination acts as a

The output Y for the inputs A and B of the given logic circuit is :

A logic circuit provides the output Y as per the following truth table : array |l|l|l| & B & Y 0 & 0 & 1 0 & 1 & 0 1 & 0 & 1 1 & 1 & 0 array The expression for the output Y is :

The output ( Y ) of the given logic gate is similar to the output of an/a

The I-V characteristics shown above are exhibited by a

Consider the following statements A and B and identify the correct answer: A. For a solar-cell, the I-V characteristics lies in the IV quadrant of the given graph. B. In a reverse

The given circuit is equivalent to

A full wave rectifier circuit consists of two p - n junction diodes, a centre-tapped transformer, capacitor and a load resistance. Which of these components remove the ac ripple

The above figure shows the circuit symbol of a transistor. Select the correct statements given below: (A) The transistor has two segments of p-type semiconductor separated by a

Given below are two statements: Statement I : Photovoltaic devices can convert optical radiation into electricity. Statement II : Zener diode is designed to operate under reverse

For the following logic circuit, the truth table is:

A p-type extrinsic semiconductor is obtained when Germanium is doped with

The incorrect statement about the property of a Zener diode is:

Identify the equivalent logic gate represented by the given circuit:

The collector current in a common base amplifier using n - p -n transistor is 24 ~mA . If 80 \% of the electrons released by the emitter is accepted by the collector, then the

In the given circuits (a), (b) and (c), the potential drop across the two p - n junctions are equal in:

In half wave rectification, if the input frequency is 60Hz , then the output frequency would be

The truth table for the given logic circuit is:

The electron concentration in an undefined n -type semiconductor is the same as hole concentration in a undefined p -type semiconductor. An external field (electric) is applied

Consider the following statements (A) and (B) and identify the correct answer. (A) A Zener diode is connected in reverse bias when used as a voltage regulator. (B) The potential

For the given circuit, the input digital signals are applied at the terminals A, B and C . What would be the output at the terminal y ?

Out of the following which one is a forward biased diode?

Which of the following gate is called universal gate?

A n - p - n transistor is connected in common emitter configuration in which collector voltage drop across load resistance ( 800Ω ) connected to the collector circuit is 0 . 8V .

An intrinsic semiconductor is converted into n -type extrinsic semiconductor by doping it with:-

The increase in the width of the depletion region in a p-n junction diode is due to:

For transistor action, which of the following statements is correct?

The solids which have the negative temperature coefficient of resistance are:

For the logic circuit shown, the truth table is:

For CE configuration n-p-n transistor. Which of the following statement is correct?

Following circuit will act as

The given combination will work as

The correct Boolean operation represented by the circuit diagram drawn is,

For a p - type semiconductor, which of the following statements is true?

The circuit diagram shown here corresponds to the logic gate,

In the circuit shown in the figure, the input voltage V _ i is20V, V _ BE = 0and V _ CE = 0 . The values of I _ B , I _ C andβ are given by