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BITSAT Semiconductors PYQs with Solutions

29 previous year questions from Semiconductors (BITSAT Physics) with answers and solutions. Numbered list, year tags, and one-tap solutions — built for serious JEE / NEET practice.

29 questionsPhysics2009–2024Answers + solutions

About Semiconductors PYQs

Semiconductors has 29 previous year questions in the Quantrex Academy BITSAT Physics bank. The 29 questions in this list come from BITSAT (29), spanning 2009 to 2024. Each question opens on its own page with the options, the correct answer and the worked solution where available.

BITSAT Semiconductors PYQs with Solutions

About Semiconductors PYQs

Questions by year (this list)

Semiconductors questions with solutions

Identify the correct output signal Y in the given combination of gates for the given inputs A and B shown in the figure.

Identify the logic gate given in the circuit :

A reverse biased zener diode when operated in the breakdown region works as

Identify the logic operation performed by the following circuit.

The logic operations performed by the given digital circuit is equivalent to:

The effect of increase in temperature on the number of electrons in conduction band (n_ e ) and resistance of a semiconductor will be as:

For an insulator, the forbidden energy gap is

In the circuit shown assume the diode to be ideal. When V_i increases from -2 V to 6 V , the change in current is (in mA)

In the following circuit the equivalent resistance between X and Y is...... Ω

A transistor is connected in common-emitter (CE) configuration. The collector supply is 8 V and the voltage drop across a resistor is 500 Ω in the collector circuit is 0.6 V . If

A zener diode of voltage V_ Z (=6 V) is used to maintain a constant voltage across a load resistance R_ L (=1000 Ω) by using a series resistance R_ s (=100 Ω) . If the e.m.f. of

The I - V characteristics shown in figure represents

If the forward voltage in a semiconductor diode is changed from 0.5 V to 0.7 V , then the forward current changes by 1.0 mA . The forward resistance of diode junction will be

In the following circuit diagram, the current through the battery is

At a certain temperature, the number density of charge carriers in a semiconductor is n . When an electric field is applied to it, the charge carriers drift with an average speed

In the given circuit,& The current through battery is

A common emitter amplifier has a voltage gain of 50 , an input impedance of 100Ω and an output impedance of 200Ω . The power gain of the amplifier is

In CE transistor amplifier, the audio signal voltage across the collector resistance of 2 k Ω is 2 V . If the base resistance is 1 k Ω and the current amplification of the

For a CE transistor amplifier, the audio signal voltage across the collector resistance of 2.0 k Ω is 2.0 V . Suppose the current amplification factor of the transistor is 100

The combination of gates shown below yields

Transfer characteristics [output voltage (V_ 0 ) vs input voltage . (V_ 1 ) ] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a

The circuit is equivalent to

An oscillator is nothing but an amplifer with

The output of an OR gate is connected to both the inputs of a NAND gate. The combination will serve as a:

In a semiconductor diode, the barrier potential offers opposition to

A transistor has a base current of 1 mA and emitter current 90 mA . The collector current will

A d.c. battery of V volt is connected to a series combination of a resistor R and an ideal diode D as shown in the figure below. The potential difference across R will be

Assuming the diodes to be of silicon with forward resistance zero, the current I in the following circuit is39. Assuming the diodes to be of silicon with forward resistance zero

The truth table given below correspond to the logic gate tabular cc|c A & B & X 0 & 0 & 1 1 & 0 & 0 0 & 1 & 0 1 & 1 & 0 tabular

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