Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
NEETPhysicsSemiconductors

From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is 10 x , for R B = 10 kΩ , and R C = 1 kΩ . The value of x is _____.

Options

  1. A3
  2. B4
  3. C5
  4. D6

Correct answer

A. 3

Step-by-step solution

The formula to calculate the current gain β in CE configuration is given by β = ∆ I C ∆ I B . . . 1 Considering the third and the first points on the given graph, the current gain can be calculated as follows: β = 30 - 10 × 10 - 3 A 300 - 100 × 10 - 6 A = 100 The formula to calculate the power gain P in CE mode can be written as P = β 2 · R C R B . . . 2 Substitute the known values of the parameters into equation (2) and solve to calculate the required unknown parameter. 10 x = 100 2 × 1 kΩ 10 kΩ = 1000 = 10 3 ⇒ x

Practice Semiconductors on Quantrex Academy →

More from Semiconductors

For two inputs A and B and output Y, the Boolean expression for NOR gate is 2026For an n-type semiconductor, the relation between the number density ' n_h ' and ' n_e ' is 2026A silicon crystal is doped with 5 10¹⁷ cm ⁻³ atoms of boron. The electron concentration (n_e) at room temperature is (n_i = 1.5 10¹⁰ cm ⁻³) 2026If the current gain in common-base configuration ( ) of a transistor increases from 0.95 to 0.96, the percentage change in current gain in common-emitter configuration ( ) is appro 2026Out of the following what is used to detect the intensity of light ? 2026The color of light emitted by an LED is determined primarily by which of the following factors? 2026Which of the following is true for a p-type semiconductor? 2026In case of semiconductors, the band gap between the valence band and conduction band is 2026 Full Semiconductors list All NEET PYQs