NEETPhysicsSemiconductors
Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R Assertion A: Diffusion current in a p - n junction is greater than the drift current in magnitude if the junction is forward biased. Reason R: Diffusion current in a p - n junction is form the n -side to the p -side if the junction is forward biased. In the light of the above statements, choose the most appropriate an
Options
- ABoth A and R are correct but R is NOT the correct explanation of A
- BA is correct but R is not correct
- CA is not correct but R is correct
- DBoth A and R is correct and R is the correct explanation of A
Correct answer
B. A is correct but R is not correct
Step-by-step solution
The electric current due to the charge concentration gradient is known as diffusion current.When the charge carriers move in a semiconductor due to the applied electric field, the resulting current is known as drift current. If the positive terminal of the battery is connected to the p-type while the negative terminal of the battery is connected to the n-type, the movement of electrons is eased as they can travel to the positive terminal of the battery. This causes an increase in the diffusion current. Hence, the d