NEET
- Exam
- NEET
- Subject
- Physics
- Chapter
- Semiconductors
NEET · Physics · Semiconductors
Assertion : The dominant mechanism for motion of charge carriers in...
Assertion : The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P-N junction are drift in both forward and reverse bias.
Reason : In reverse biasing, no current flow through the junction.
Options
- ABoth (A) and (R) are true and (R) is the correct explanation of (A).
- BBoth (A) and (R) are true and (R) is NOT the correct explanation of ((\mathrm{A})).
- C(A) is true but (R) is false.
- DBoth (A) and (R) are false.
Correct answer
D. Both (A) and (R) are false.
Step-by-step solution
Assertion Analysis: The assertion is incorrect. In a forward-biased P-N junction, the dominant mechanism for charge carrier motion is diffusion, where majority carriers (holes from the p -side and electrons from the n -side) move across the junction. In contrast, in reverse bias, the dominant mechanism is drift, primarily involving minority carriers moving due to the electric field created by the applied voltage
Reason Analysis: Reason is true for an ideal diode, no current flows.