Quantrex Quantrex AcademyJEE · NEET · NDA PYQs with solutions Open app
NEETPhysicsSemiconductors

Which of the following photo diodes, D1, D2, and D3, made of semiconductors with band gaps of 2.5eV, 2eV, and 3eV respectively, will be able to detect light of wavelength 6000 Å?

Options

  1. AD1 only
  2. BD2 only
  3. CD3 only
  4. DBoth D1 and D3

Correct answer

B. D2 only

Step-by-step solution

Correct Option is : (B) D2 only

Practice Semiconductors on Quantrex Academy →

More from Semiconductors

For two inputs A and B and output Y, the Boolean expression for NOR gate is 2026For an n-type semiconductor, the relation between the number density ' n_h ' and ' n_e ' is 2026A silicon crystal is doped with 5 10¹⁷ cm ⁻³ atoms of boron. The electron concentration (n_e) at room temperature is (n_i = 1.5 10¹⁰ cm ⁻³) 2026If the current gain in common-base configuration ( ) of a transistor increases from 0.95 to 0.96, the percentage change in current gain in common-emitter configuration ( ) is appro 2026Out of the following what is used to detect the intensity of light ? 2026The color of light emitted by an LED is determined primarily by which of the following factors? 2026Which of the following is true for a p-type semiconductor? 2026In case of semiconductors, the band gap between the valence band and conduction band is 2026 Full Semiconductors list All NEET PYQs