NEETPhysicsSemiconductors
Given below are two statements: one is labelled as Assertion (A) and the other is labelled as Reason (R). Assertion (A): In a p-n junction diode, reverse biasing increases the width of the depletion region. Reason (R): The applied reverse voltage establishes an external electric field in the opposite direction to the built-in electric field of the junction. In the light of the above statements, choose the most approp
Options
- ABoth (A) and (R) are true and (R) is the correct explanation of (A)
- BBoth (A) and (R) are true but (R) is not the correct explanation of (A)
- C(A) is true but (R) is false
- D(A) is false but (R) is true
Correct answer
C. (A) is true but (R) is false
Step-by-step solution
Assertion (A) is true because in reverse bias, the majority charge carriers are pulled away from the junction, uncovering more immobile ions and thereby increasing the width of the depletion region. Reason (R) is false because in reverse bias, the positive terminal of the battery is connected to the n-side and the negative terminal to the p-side. This establishes an external electric field in the same direction as the built-in electric field (which also points from the n-side to the p-side), not in the opposite dir