NEETPhysicsSemiconductors
Match List-I with List-II. List-I List-II (A) Zener diode as voltage regulator (I) 0.7 V (B) Barrier potential of Silicon diode (II) Increases (C) Barrier potential of Germanium diode (III) Reverse bias breakdown region (D) Depletion region width in reverse bias (IV) 0.3 V Choose the correct answer from the options given below:
Options
- A(A)-(III), (B)-(IV), (C)-(I), (D)-(II)
- B(A)-(III), (B)-(I), (C)-(IV), (D)-(II)
- C(A)-(II), (B)-(I), (C)-(IV), (D)-(III)
- D(A)-(III), (B)-(I), (C)-(II), (D)-(IV)
Correct answer
B. (A)-(III), (B)-(I), (C)-(IV), (D)-(II)
Step-by-step solution
A Zener diode is heavily doped and operates in the reverse bias breakdown region to act as a voltage regulator. The typical barrier potential for a Silicon p-n junction diode is approximately 0.7 V , whereas for a Germanium diode, it is approximately 0.3 V . When a p-n junction is reverse biased, the applied voltage adds to the built-in potential, causing the depletion region width to increase. Therefore, the correct matching is (A)-(III), (B)-(I), (C)-(IV), (D)-(II). Answer: (A)-(III), (B)-(I), (C)-(IV), (D)-(II)