When a p-n junction diode is subjected to a reverse bias, which of the following correctly describes the effect on the depletion region and the dominant mechanism of current?

Step-by-step solution

In a reverse-biased p-n junction, the applied voltage acts in the same direction as the built-in barrier potential. This pulls majority carriers away from the junction, increasing the width of the depletion region and the barrier height. The increased barrier effectively stops the diffusion of majority carriers across the junction. Consequently, the small reverse current that flows is entirely due to the drift of minority charge carriers swept across the junction by the strong electric field in the depletion region