Which of the following statements is NOT true?

The resistance of an intrinsic semiconductor decreases with an increase in temperature because more electron-hole pairs are generated, which increases conductivity.

Doping pure silicon with trivalent impurities (such as Boron, Aluminum, Gallium) creates a deficiency of electrons, leading to the formation of holes. This results in a $p$-type semiconductor.

In an $n$-type semiconductor, pentavalent impurities are added, which provide extra electrons. Therefore, the majority charge carriers in an $n$-type semiconductor are electrons, not holes.

A $p$-$n$ junction diode offers very low (negligible) resistance when it is forward biased because the width of the depletion region decreases, allowing current to flow easily.

Thus, the statement that majority carriers in $n$-type semiconductors are holes is incorrect.

Answer: The majority carries in $n$ -type semiconductors is holes