C and Si both have same lattice structure, having 4 bonding...

C

and Si both have same lattice structure, having 4 bonding electrons in each. However,

C

is insulator whereas

\mathrm{Si}

is intrinsic semiconductor. This is because

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Ain case of $\mathrm{C}$ , the valence band is not completely filled at absolute zero temperature
Bin case of $C$ , the conduction band is partly filled even at absolute zero temperature
Cthe four bonding electrons in the case of $C$ lie in the second orbit, whereas in the case of Si they lie in the third
Dthe four bonding electrons in the case of $\mathrm{C}$ lie in the third orbit, whereas for $\mathrm{Si}$ they lie in the fourth orbit

C. the four bonding electrons in the case of $C$ lie in the second orbit, whereas in the case of Si they lie in the third

The four bonding electrons in the case of

C

lie in the second orbit, whereas in case of Si they lies in the third orbit so loosely bounded valency electron in

\mathrm{Si}

as compared to

\mathrm{C}